Tailoring the Charge Carrier Lifetime Distribution of 10 kV SiC PiN Diodes by Physical Simulations

In this paper, Shockley-Read-Hall (SRH) lifetime depth profiles in the drift layer of 10 kV SiC PiN diodes are calculated after MeV proton implantation. It is assumed that carbon vacancy will be domination trap for charge carrier recombination and SRH with defect parameters from literature proton-induced distributions deduced SRIM calculations. The imported to Sentaurus TCAD static dynamic simulations using tailored carried out study electrical effect implantation parameters. results compared measurements, specializing on optimization trade off between on-state turn-off losses, represented by forward voltage drop, V T , reverse recovery charge, Q rr respectively. Both simulated measured IV characteristics show increasing dose, or energy, has drop while simultaneously, localized decreases plasma level, increases speed charge. Finally, different combinations energies fluences used optimize trade-off performances. Reverse drops these groups plotted together, showing a medium energy which induces most defects depletion region relatively close anode gives best performances, minimum cost performance.